Performance Analysis of High-K Dielectric Heterojunction High Electron Mobility Transistor for RF Applications

Abstract

We have designed and simulated a 10-nanometer regime gate High Electron Mobility Transistor (HEMT) with an undoped region (UR) under the gate with high k dielectric as hafnium oxide (HfO2). The thickness of metal gate(G) and undoped regions are equal but length of channel(C) is not equivalent. The proposed Undoped under the gate dielectric High Electron Mobility Transistor reduces the maximum electric field(V) in the channel region and increases the drain current significantly. The High-K dielectric High Electron Mobility Transistor structure obtained a saturated Ion current of 60% higher than the conventional structure. For High critical Power and High-frequency Power transmission Amplifiers utilizes the AlGaN/GaN/SiC-based High Electron Mobility Transistor with an undoped region under the gate with High-K Hafnium oxide. The Proposed advanced High Electron Mobility Transistor Produces a higher Drain current (Id), 54% high transconductance (Gm) with Low On-Resistance (Ron), and High conductivity in comparison to typical High Electron Mobility Transistor. In Addition to these improved characteristics, the Electric field along the Y direction is also observed. The proposed structure formed by Low-k Dielectric materials in the process of Silicon Dioxide(SiO2) and High-k dielectric being Titanium Dioxide (TiO2) and Hafnium Oxide (HfO2) created more opportunities in Power electronics and radio frequency operations.

Design and Performance Analysis of 6H-SiC Metal-Semiconductor Field-Effect Transistor with Undoped and Recessed Area under Gate in 10nm Technology

“…Among the various SiC devices, the Silicon Carbide Metal-Semiconductor Field-Effect Transistor (6H-SiC MESFET) stands out as a promising material for Highpower and High-frequency applications. 6H-SiC has a wide band gap, which allows the device to operate at elevated temperatures while maintaining stable performance [2]. The high thermal conductivity of SiC further ensures efficient heat dissipation, reducing the liability of thermal breakdown at high power level and high band gap level.…”

Design and Analysis of Hetero Dielectric Dual Material Gate Underlap Spacer Tunnel Field Effect Transistor

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