A novel process for fabricating refractory sperconducting tunnel junctions is described, which is useful with both deposited and native oxide barriers. The distinguishing feature of the method is that the entire superconductor-barrier-superconductor sandwich is formed before the patterning of any layer. Isolated Josephson junctions are then formed by anodizing through the upper electrode, while the devices themselves are protected by a photoresist mask. Using this process, Nb-Si:H-Nb junctions have been fabricated, whose product of critical current and subgap resistance exceeds 10 mV and whose critical current density varies by about 50% over a 2-in. diameter wafer.

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