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A SiGe HBT technology featuring f T /f max /BV CEO =300GHz/ 500GHz/1.6V and a minimum CML ring oscillator gate delay of 2.0 ps is presented. The speed-improvement compared to our previous SiGe HBT generations originates from lateral device scaling, a reduced thermal budget, and changes of the emitter and base composition, of the salicide resistance as well as of the low-doped collector formation.

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The conduction process as well as the unipolar resistive switching behavior of Au∕HfO2∕TiN metal-insulator-metal structures were investigated for future nonvolatile memory applications. With current-voltage measurements performed at different temperatures (200–400K), the Poole–Frenkel effect as conduction process was identified. In particular, we extracted a trap energy level at ϕt=0.35±0.05eV below the HfO2 conduction band to which a microscopic origin is tentatively assigned. From current-voltage measurements of Au∕HfO2∕TiN structures, low-power (as low as 120μW) resistive switching was observed. The required forming process is shown to be an energy-induced phenomenon. The characteristics include electric pulse-induced resistive switching by applying pulses up to 100μs and a retention time upon continuous nondestructive readout of more than 104s.