We report a detailed study of steplike magnetization and resistivity jumps in a bilayered ͑La 0.5 Nd 0.5 ͒ 1.2 Sr 1.8 Mn 2 O 7 single crystal. The sample exhibits very sharp metamagnetic transitions at low temperature when the magnetic field is applied either in an ab plane or along the c axis, which causes huge magnetization steps. The critical field depends on the cooling magnetic field as well as the sweep rate of the magnetic field. Meanwhile, the evolution with time of the magnetization exhibits a spontaneous step when both the temperature and magnetic field are constant. Similar steplike behaviors are also observed in resistivity. These results suggest that a martensiticlike transformation could happen in bilayered manganites.

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This paper reports that the (Ga, Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co 2+ and Ga 3+ ions substitute for Zn 2+ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic (Ga, Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room temperature. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.