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Single crystalline AlN material is very attractive for the development of high temperature electronic devices owing to its high temperature resistance. However, at ultrahigh temperatures, AlN film still will be oxidized and metal electrodes used for the devices will aggregate and vaporize. The deterioration of the material and metal electrodes eventually fails the AlN-based devices. Here, we report a single crystalline AlN film-based ultrahigh temperature surface acoustic wave (SAW) device. By using a thin alumina (Al2O3) protection layer on surface, oxidation of the AlN piezoelectric film was effectively inhibited at high temperatures. A composite electrode based on multilayer structure of Pt-Rh and Al2O3 was designed and fabricated, with the Al2O3 layer as the diffusion barrier layers to suppressed inter-diffusion, agglomeration and vaporization of the metals. The results showed that the developed AlN SAW devices can withstand high temperatures, and work well at temperatures up to 1400 °C.

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