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SUMMARYIn this study, it is demonstrated that the iron loss from the SiC-MOSFET, which represents a new power semiconductor with an extremely low on-voltage for electric machine drives, is almost the same as that from an Si-IGBT, which is a conventional power semiconductor. In order to evaluate the iron loss characteristics when an SiC device is used, two single-phase pulse width modulation inverters were built and used for the excitation of a ring made up of electrical steel sheet. One of the inverter employed an SiC-MOSFET, and the other inverter employed an Si-IGBT. The iron losses for the two inverters are compared.

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