The minimal gene set essential for life has long been sought. We report the 860-kb genome of the obligate intracellular plant pathogen phytoplasma (Candidatus Phytoplasma asteris, OY strain). The phytoplasma genome encodes even fewer metabolic functions than do mycoplasma genomes. It lacks the pentose phosphate cycle and, more unexpectedly, ATP-synthase subunits, which are thought to be essential for life. This may be the result of reductive evolution as a consequence of life as an intracellular parasite in a nutrient-rich environment.

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The effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and were investigated using both electrical and physical characterization methods. Hall measurements and split capacitance–voltage (C–V) measurements revealed that the difference in field-effect mobility between wet oxide and dry oxynitride interfaces was mainly attributed to the ratio of the mobile electron density to the total induced electron density. The surface states close to the conduction band edge causing a significant trapping of inversion carriers were also evaluated. High-resolution Rutherford backscattering spectroscopy (HR-RBS) analysis and high-resolution elastic recoil detection analysis (HR-ERDA) were employed to show the nanometer-scale compositional profile of the SiC-MOS interfaces for the first time. These analyses, together with cathode luminescence (CL) spectroscopy and transmission electron microscopy (TEM), suggested that the deviations of stoichiometry and roughness at the interface defined the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and .

A GaAs-based three-branch nanowire junction (TBJ) with Schottky wrap gates (WPGs) is investigated to realize novel Boolean logic gates.The WPG-controlled TBJ shows a bell-shaped voltage input-output curve and is controlled by gate voltage on the WPGs. The observed characteristics are explained using a simple equivalent circuit model. AND gate operation is realized in the WPG-controlled TBJ and its output voltage swing is controlled using WPGs. It can also operate as a NOT gate by changing the measurement circuit. A NAND gate is fabricated by integrating two WPG-controlled TBJs, and correct operation with a voltage transfer gain of 2.2 is realized.

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