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Charge transfer processes via deep levels (DLs) of a free-standing n-GaN grown by hydride vapor phase epitaxy is investigated using two types of excitations in time resolved photoluminescence (PL) analysis: above the bandgap energy (E g ) (AEG) and sub-E g (SEG). Using SEG excitation allowing us the PL observation free from carrier dynamics around band-edges such as excitonic recombination varying the population influx to DLs, intrinsic properties of DL-related PL and charge transfer processes are exhibited. The shortening of PL lifetime of red-light luminescence accompanied by a slight increase in its intensity by increasing temperature suggests the dominance of radiative transition.

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