The influence of the light intensity level, of illuminance depth and of temperature on some parameters of a silicon solar cell operating in the vicinity of the short-circuit has been the subject of our study.Starting from the continuity equation, then from the equation of the density of minority charge carriers where the effects were studied, we have analyzed the performance parameters according to a temperature range from and under an illumination from to Sun.The results indicate that the illumination intensity has a dominant effect on the current parameters.The photocurrent density and the short-circuit current increase with increasing light intensity level whereas the shunt resistance is more sensitive to temperature variations.

In this article, we have established the expressions of the density of minority charge carriersand the recombination velocity at the back face of our sample.The effects of the base doping rate combined with the effects of temperature on the latter have been the subject of our study.Thus, we followed the evolution of the density of minority charge carriers and of the recombination velocity at the back face as a function of the thickness of the base for different base doping rate and for different values of the temperature.

We propose, in this article, the study of the phenomena of energy storage in a wall in frequency dynamic mode. The optimal heat exchange coefficient and the maximum pulsation were determined from the temperature and flux density curves, respectively. An electric-thermal analogy made it possible to determine the phenomena of energy storage from Bode diagrams of thermal capacity and thermal inductance.