Tin oxide SnO 2 films were prepared by RF magnetron sputtering. The effects of oxygen partial pressure percentage on the SnO 2 property have been investigated to obtain relatively high-resistivity SnO 2 films which could be used as buffer layers to optimize the performance of CdTe/CdS solar cells. The oxygen partial pressure percentage varied in the range of 1%∼10%. The results show that the introduction of oxygen would suppress the deposition and growth of SnO 2 films. Electrical measurement suggests that the film resistivity decreases with the increase of oxygen pressure. The SnO 2 films with resistivity of 232 Ω cm were obtained in pure Ar atmosphere. All SnO 2 films fabricated with different oxygen partial pressure percentage have almost the same optical band gap.

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