Preparation and Properties of SnO₂Film Deposited by Magnetron Sputtering

Abstract

Tin oxide SnO 2 films were prepared by RF magnetron sputtering. The effects of oxygen partial pressure percentage on the SnO 2 property have been investigated to obtain relatively high-resistivity SnO 2 films which could be used as buffer layers to optimize the performance of CdTe/CdS solar cells. The oxygen partial pressure percentage varied in the range of 1%∼10%. The results show that the introduction of oxygen would suppress the deposition and growth of SnO 2 films. Electrical measurement suggests that the film resistivity decreases with the increase of oxygen pressure. The SnO 2 films with resistivity of 232 Ω cm were obtained in pure Ar atmosphere. All SnO 2 films fabricated with different oxygen partial pressure percentage have almost the same optical band gap.

Application of ALD-Al2O3 in CdS/CdTe Thin-Film Solar Cells

“…where α is the absorption coefficient, which is related to the thickness of the film, hυ is defined as photon energy, A is a constant, and the value of n depends on the energy-band structure of the material. For direct energy-band semiconductor materials, such as SnO 2 , n is 0.5 [16]. The obtained E g was 4.33 eV for TEC 10, agreeing well with the former result [17].…”

Validation of a Terminally Amino Functionalized Tetra‐Alkyl Sn(IV) Precursor in Metal–Organic Chemical Vapor Deposition of SnO2 Thin Films: Study of Film Growth Characteristics, Optical, and Electrical Properties

“…Herewith, our SnO 2 thin films enqueue themselves into the known spectrum of resistivities reported for SnO 2 thin films. At room temperature, SnO 2 thin films manufactured by atomic layer deposition (ALD), sputtering, spray pyrolysis, EBE, and CVD exhibited resistivities of ≈2 × 10 −4 , 2.5 × 10 −5 , 2 × 10 −5 , 5 × 10 −5 , 5 × 10 −4 , and 4.5 × 10 −4 Ω m, respectively . The observable variation in the literature is related to different microstructures at different deposition temperatures and more importantly different stoichiometries that can be obtained with the different deposition techniques.…”

Synthesis and Characterization of Tin Oxide: A Review

“…They found when oxygen pressure was increase, resistivity of the film also reduces with its indicated in electrical measurement. In pure argon atmosphere SnO 2 films with resistivity was found 232 Wcm.Stedile et al [30] report was found magnetron sputtered SnO 2 films were submitted to thermal annealing and exposed to butane gas, its highly disordered. The SnO 2 films are modified under thermal processing and gas exposure, changing the oxygen vacancy concentration as could be observed in their experiment.…”