We report the observation of the three-dimensional angular dependence of the spin Hall magnetoresistance (SMR) in a bilayer of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt, without any ferromagnetic element. The detected angular-dependent longitudinal and transverse magnetoresistances are measured by rotating the sample in magnetic fields up to 11 T, along three orthogonal planes (xy-, yz-and xz-rotation planes, where the z-axis is orthogonal to the sample plane). The total magnetoresistance has contributions arising from both the SMR and ordinary magnetoresistance. The onset of the SMR signal occurs between 1 and 3 T and no saturation is visible up to 11 T. The three-dimensional angular dependence of the SMR can be explained by a model considering the reversible field-induced redistribution of magnetostrictive antiferromagnetic S-and T-domains in the NiO(001), stemming from the competition between the Zeeman energy and the elastic clamping effect of the non-magnetic MgO substrate. From the observed SMR ratio, we estimate the spin mixing conductance at the NiO/Pt interface to be greater than 2x10 14 Ω -1 m -2 . Our results demonstrate
anisotropy (PMA). In ultrathin films, skyrmions can exhibit sub-nanometer scale size [8][9][10][11] and move in response to an applied current with velocities exceeding 100 m s -1 [5] in a controllable [12,13] and reliable [13] way. Therefore, they promise great technological utility for racetracktype memories, [14] logic gates, [15] probabilistic computing, [16] and neuromorphic devices, [17] for which they have to be readily created and manipulated. Homochiral skyrmions can be stabilized by the Dzyaloshinkii-Moriya interaction (DMI) [18,19] in materials with strong spin-orbit coupling and broken inversion symmetry. Since asymmetric multilayer stacks of a ferromagnet and a heavy metal [5][6][7] possess DMI and can also exhibit large current-induced spin-orbit torques that can provide an efficient means to create and manipulate skyrmions, [20][21][22] these systems are now a central focus of current research. Magnetic skyrmions can exist as isolated topological excitations, [23,24] or as ordered arrays (hexagonal lattice) comprising the magnetic ground state, [2,5] depending on material and Magnetic skyrmions promise breakthroughs in future memory and computing devices due to their inherent stability and small size. Their creation and current driven motion have been recently observed at room temperature, but the key mechanisms of their formation are not yet well-understood. Here it is shown that in heavy metal/ferromagnet heterostructures, pulsed currents can drive morphological transitions between labyrinth-like, stripe-like, and skyrmionic states. Using high-resolution X-ray microscopy, the spin texture evolution with temperature and magnetic field is imaged and it is demonstrated that with transient Joule heating, topological charges can be injected into the system, driving it across the stripe-skyrmion boundary. The observations are explained through atomistic spin dynamic and micromagnetic simulations that reveal a crossover to a global skyrmionic ground state above a threshold magnetic field, which is found to decrease with increasing temperature. It is demonstrated how by tuning the phase stability, one can reliably generate skyrmions by short current pulses and stabilize them at zero field, providing new means to create and manipulate spin textures in engineered chiral ferromagnets.
Magnetic SkyrmionsThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.
Magnetic skyrmions are particle‐like chiral twists of the magnetization that promise advances in spin‐based data storage and logic device applications. In article number https://doi.org/10.1002/adma.201805461, Mathias Kläui, Geoffrey S. D. Beach, and co‐workers examine current‐induced generation of skyrmions in heavy‐metal/ferromagnet multilayers and show that Joule heat pulses can drive topological transitions in magnetic textures and enable skyrmion creation on nanosecond timescales.
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