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layers of the dye adsorbed from the high-concentration solutions of the dye resulted in a quantum efficiency of 4.4% based on incident radiation. With the upper bound of absorption by the dye layer being put at 7%, a lower bound on the quantum yield for an aggregated adsorbed dye layer is 0.6.These estimates of the quantum yield in the range 0.6-0.8 confirm our premise that a clean, defect-free electrode surface can serve as an excellent interface for the study of dye-sensitized surfaces. Indirectly, these results support the contention of the literature that surface decomposition products and hydroxide layers can serve as efficient recombination centers in the quenching of dyesensitized photocurrents at semiconductor electrodes.1 2In conclusion, with its near ideal behavior, this system should prove useful for modeling the sensitization process. A mathematical treatment for the process using a onedimensional Onsager model is currently under explora-tion14 as is the extension of experimentation to other layered semiconductor/ dye systems.