The advanced application of wide-band gap semiconductors in areas like photovoltaics, optoelectronics, or photocatalysis requires a precise control over electronic properties. Zinc oxide is favorable for large-scale technological applications now and in the future because of the large, natural abundance of the involved, chemical elements. Often it is important that the band gap can be controlled precisely. While a blue-shift of the band gap can be reached quite easily using the quantum-size effect, it is still very difficult to achieve a redshift. We present a powerful method for the band gap engineering of ZnO via the incorporation of sulfur as a solid solutions. The reduction of the energy gap is controlled by ZnO 1−x S x composition, whereas the latter is adjusted via special organometallic precursor molecules. The material can be supplied in a continuous fashion and in a more refined morphology, for instance spherical ZnO 1−x S x colloids with sizes below λ vis /2 (≈ 200 nm). As a concrete application of contemporary importance first steps toward the full inorganic UV protection are made.

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Structural disintegration or the loss of accessible surfaces of functional nanostructures due to processes involving mass transport (e.g. sintering) is a serious problem for any application of these materials at elevated temperatures, like in heterogeneous catalysis or chemical sensing. Phases with low sintering temperatures, e.g. some metals or metal oxides like zinc oxide (ZnO), are very sensitive in this respect. Therefore, it is not only relevant to prepare important materials with refined morphologies, but the desired features need to be stable under real conditions. In this study, we describe the preparation of mesoporous ZnO nano-/microspheres by means of a template-assisted aerosol technique. Furthermore, by intentional introduction of impurity elements as dopants, specific surface areas and porosities of the prepared materials can be increased significantly. The impurities also strongly improve the thermal stability of the described ZnO nanostructures against thermal sintering. Although the pure ZnO material suffers from a complete loss of porosity, the structures of the impure ("dirty") materials change only negligibly. Even at 500 °C morphology and porosity are preserved. The latter advantageous property was used for testing the novel nanocatalysts in heterogeneous catalysis.

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SummaryNumerous applications in optoelectronics require electrically conducting materials with high optical transparency over the entire visible light range. A solid solution of indium oxide and substantial amounts of tin oxide for electronic doping (ITO) is currently the most prominent example for the class of so-called TCOs (transparent conducting oxides). Due to the limited, natural occurrence of indium and its steadily increasing price, it is highly desired to identify materials alternatives containing highly abundant chemical elements. The doping of other metal oxides (e.g., zinc oxide, ZnO) is a promising approach, but two problems can be identified. Phase separation might occur at the required high concentration of the doping element, and for successful electronic modification it is mandatory that the introduced heteroelement occupies a defined position in the lattice of the host material. In the case of ZnO, most attention has been attributed so far to n-doping via substitution of Zn2+ by other metals (e.g., Al3+). Here, we present first steps towards n-doped ZnO-based TCO materials via substitution in the anion lattice (O2− versus halogenides). A special approach is presented, using novel single-source precursors containing a potential excerpt of the target lattice 'HalZn·Zn3O3' preorganized on the molecular scale (Hal = I, Br, Cl). We report about the synthesis of the precursors, their transformation into halogene-containing ZnO materials, and finally structural, optical and electronic properties are investigated using a combination of techniques including FT-Raman, low-T photoluminescence, impedance and THz spectroscopies.