Si 0.7 Ge 0.3 epilayers with low threading dislocation density have been grown on Si (001) substrates by introducing a low temperature Si buffer. Such a structure can be used as the buffer for the growth of device structures. In comparison with the conventional compositionally graded buffer system, it has the advantages of having lower threading dislocation density, smaller thickness for required degree of relaxation, and smoother surface. Experimental evidence suggests that an anomalous relaxation mechanism has been involved.

We have investigated in a systematic way the magnetic properties of Fe3O4 films grown directly on a Si(001) substrate and on a copper (Cu) buffer layer using the electron beam deposition technique. The effect of the Cu buffer layer thickness on the microstructure and magnetic properties of Fe3O4 has been studied. The effect of annealing on the magnetic properties of Fe3O4 films with various Cu buffer layer thicknesses was also studied. For Fe3O4 films deposited directly on Si(001), we observed two distinct switching fields due to the presence of two magnetic phases which are weakly coupled at the substrate interface.

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Effects of relaxation on glass transition and crystallization of ZrTiCuNiBe bulk metallic glass