Identification of the prevailing radiation defects of large density remains a considerable issue for particle detectors made of high resistivity Si. To clarify the dominant radiation induced traps within CERN standard Si pad detectors, the capacitance (C-) and current (I-) deep level transient spectroscopy (DLTS) techniques have been combined. Additionally, the optical (O-) injection I-DLTS regime has been employed to cover a wide range of neutron irradiation fluences of 10 12-10 16 cm-2. The spectra of C-DLTS and O-I-DLTS have been recorded using the temperature scans in the range of 20-300 K. The radiation induced vacancy (V) attributed defects such as V-O, V 2 , and clusters have been identified, the density of which increases with irradiation fluence in the range of 10 12-10 14 cm-2 , while this density saturates for the collected neutron fluence of more than 10 14 cm-2 .

The efficiency of solar cells considerably depends on the technological defects introduced by the formation of junctions, passivation layers and electrodes. Identification of these defects present in the high conductivity base layer of modern solar cells by usage of the standard techniques, such as capacitance deep level spectroscopy, is restricted by extremely small size of samples with inherent enhanced leakage current on sample boundaries. Therefore, it is important to develop the alternative methods for the defect spectroscopy in the high conductivity junction structures, to directly control a relative low concentration of the technological defects. In this work, the spectroscopy of deep traps has been performed by combining the temperature scans of the thermal generation currents extracted from barrier capacitance charging transients and capacitance deep level transient spectroscopy techniques. The dominant carrier traps ascribed to the Cu and Ni impurities were revealed.

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