Described herein is the performance of developable KrF BARCs as applied to line/space patterning including resolution limits for these materials, proximity effects on undercut for these materials, and DOF provided for these materials. Also included herein are the effects of undercut and scumming, as well as photoresist budget saving, when using a wet developable BARC for deep via etching. It can be seen when using a developer soluble BARC for line/space patterning DOF provides a wide processing margin, line pitch has little effect on BARC undercut, and resolution is high. When using a developer soluble BARC for contact hole printing and deep via etching, photoresist budgets are increased and BARC undercut has little effect on via size and shape.