Boron diffusion in MgO has been investigated in annealed film stacks of sputtered CoFeB∣MgO using transmission electron microscopy and parallel electron energy loss spectroscopy. The analyses show significant B movement when the films are annealed, with the formation of BOx complexes. Characteristic diffusion lengths have been estimated in films annealed at the commonly employed temperature range of 300–400°C for the fabrication of magnetic tunnel junctions. An activation energy of 1.3eV (±0.4eV) has been extracted from these data that represent B diffusion in MgO through vacancies and defect states mediated by the formation of BOx complexes.

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The relationship between crystallization, grain growth behavior, and the diffusion of B out of CoFeB has been investigated in annealed film stacks of sputtered CoFeB∣MgO using a combination of two dimensional x-ray diffraction, transmission electron microscopy, and parallel electron energy loss spectroscopy (PEELS). The analysis shows grain growth in MgO layers. It shows crystallization at approximately 350°C, and subsequent grain growth in CoFeB layers with annealing. The orientations of the grains of MgO and CoFe are definitively shown to be (002) in the out-of-plane direction. The MgO lattice is seen to have an in-plane tensile stress, while CoFe lattice is shown to have an in-plane compressive stress. CoFe grains are observed to be smaller than MgO grains, rather than being of equal size as previously understood. The physical process of B diffusion into MgO has also been investigated using PEELS and is determined that the diffusion of B through MgO is mediated through vacancies and defect states by the formation of BOx complexes.

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