Porous silicon seems to be an appropriate material platform for the development of high-sensitivity and low-cost optical sensors, as their porous nature increases the interaction with the target substances, and their fabrication process is very simple and inexpensive. In this paper, we present the experimental development of a porous silicon microcavity sensor and its use for real-time in-flow sensing application. A high-sensitivity configuration was designed and then fabricated, by electrochemically etching a silicon wafer. Refractive index sensing experiments were realized by flowing several dilutions with decreasing refractive indices, and measuring the spectral shift in real-time. The porous silicon microcavity sensor showed a very linear response over a wide refractive index range, with a sensitivity around 1000 nm/refractive index unit (RIU), which allowed us to directly detect refractive index variations in the 10−7 RIU range.

A highly sensitive photonic sensor based on a porous silicon ring resonator was developed and experimentally characterized. The photonic sensing structure was fabricated by exploiting a porous silicon double layer, where the top layer of a low porosity was used to form photonic elements by e-beam lithography and the bottom layer of a high porosity was used to confine light in the vertical direction. The sensing performance of the ring resonator sensor based on porous silicon was compared for the different resonances within the analyzed wavelength range both for transverse-electric and transverse-magnetic polarizations. We determined that a sensitivity up to 439 nm/RIU for low refractive index changes can be achieved depending on the optical field distribution given by each resonance/polarization.

Porous materials have become ideal candidates for the creation of optical sensors that are able to reach extremely high sensitivities, due to both the possibility to infiltrate the target substances on them and to their large surface-to-volume ratio. In this work, we present a new alternative for the creation of porous optical sensors based on the use of polymeric nanofibers (NFs) layers fabricated by electrospinning. Polyamide 6 (PA6) NFs layers with average diameters lower than 30 nm and high porosities have been used for the creation of Fabry-Pérot optical sensing structures, which have shown an experimental sensitivity up to 1060 nm/RIU (refractive index unit). This high sensitivity, together with the low production cost and the possibility to be manufactured over large areas, make NFs-based structures a very promising candidate for the development of low-cost and high performance optical sensors.

An optical sensor based on a self-standing porous silicon (PS) membrane is presented. The sensor was created by electrochemically etching a heavily doped p-type silicon wafer with an organic electrolyte that contained dimethylformamide (DMF). After fabrication, a high current density close to electropolishing was applied in order to allow the detachment from the substrate using a lift-off method. The PS membrane was integrated in a microfluidic cell for sensing purposes and reflectance spectra were continuously obtained while the target substance was flowed. A comparison of the bulk sensitivity achieved when flowing through and over the pores is reported. During the experiments, a maximum sensitivity of 770 nm/RIU measured at 1700 nm was achieved. Experimental sensitivity values are in good agreement with the theoretical calculations performed when flowing through the PS membrane, meaning that the highest possible sensitivity of that sensor was achieved. In contrast, a drop in the sensitivity of around 25% was observed when flowing over the PS membrane.

Tuning the pore diameter of porous silicon films is essential for some applications such as biosensing, where the pore size can be used for filtering analytes or to control the biofunctionalization of its walls. However, macropore (>50nm) formation on p-type silicon is not yet fully controlled due to its strong dependence on resistivity. Electrochemical etching of heavily doped p-type silicon usually forms micropores (<5nm), but it has been found that bigger sizes can be achieved by adding an organic solvent to the electrolyte. In this work, we compare the results obtained when adding dimethylformamide (DMF) and dimethylsulfoxide (DMSO) to the electrolyte as well as the effect of a post-treatment of the sample with potasium hydroxide (KOH) and sodium hydroxide (NaOH) for macropore formation in p-type silicon with resistivities between 0.001 and 10 • cm, achieving pore sizes from 5 to 100nm.