Electron scattering mechanisms in copper lines were investigated to understand the extendibility of copper interconnects when linewidth or thickness is less than the mean free path. Electron-beam lithography and a dual hard mask were used to produce interconnects with linewidths between 25 and 45 nm. Electron backscatter diffraction characterized grain structure. Temperature dependence of the line resistance determined resistivity, which was consistent with existing models for completely diffused surface scattering and line-edge roughness, with little contribution from grain boundary scattering. A simple analytical model was developed that describes resistivity from diffuse surface scattering and line-edge roughness.

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We designed and fabricated a series of micromechanical test structures for microtensile testing by anisotropically etching epitaxial silicon. Specimens were fabricated to study Young’s moduli, the uniaxial tensile strength, and the strength of T-structures which are tensile bars with an abrupt reduced cross section that have a 90° corner at the point of reduction. They are a generic mimic of actual transitions that occur in micromechanical structures due to anisotropic etching. The test structures were loaded in uniaxial tension in a piezoactuated microtensile test apparatus. The applied force and crosshead displacement were recorded and displacements in the specimen gage section were directly measured using a speckle interferometry technique. During tensile loading of the T-structures, fracture always initiates at the sharp 90° corners. This results in an interesting apparent strength scaling where the nominal strength of the structures increases as their width decreases. In order to understand the fracture initiation from the sharp 90° corners of the silicon T-structures, we carried out a complete analysis of the elastic fields at the 90° corners by coupling an asymptotic analysis (to compute the asymptotic radial and angular dependence of the elastic fields up to an arbitrary constant for each loading mode, the stress intensity), and full-field finite element calculations (to determine the magnitude of the stress intensities for specific geometries and loadings). Excellent results are obtained by using a single parameter, the critical mode I stress intensity, to correlate fracture initiation from the sharp 90° corners of the T-structures.

A new method of measuring the mechanical strength of thin films is described. We prepare miniature arrays of four tensile specimens, each 0.25 mm wide, 1 mm long, and 2.2 μm thick, using deposition, patterning, and etching processes common to the semiconductor industry. Each array of four specimens is carried on and protected by a rectangular silicon frame. Thirty-six such specimens are produced on a single wafer. After a specimen frame is mounted, its vertical sides are severed without damaging the specimens. The load is applied by micrometers through a special tension spring. Tensile properties of a 2.2 μm thick Ti–Al–Ti film were determined.

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