The aim of this article is to trace the trajectory of family policy development in South Korea from the 1940s to the present. Changes to family intervention are analyzed in terms of the settings of policy instruments, the policy instruments themselves, and policy goals (or policy regimes). Consequently, two critical turning points are identified: the late 1980s and the early 2000s. The first period (1945–1988) was an era of embryonic Korean family policy when family intervention was limited and indirect based on Confucian familism. During the second period (1998–2003), explicit family policies emerged, but the Korean government kept family intervention to a minimum; maintained a division of roles between the state, the market, and families (the state as the regulator and the market/families as the providers); and maintained patriarchal family relations and gendered family roles based on Confucian familism. However, the third period (2003–2016) shows the explosive expansion of family policies and changes in policy goals and regimes based on Neo‐familism, which emphasizes democratic and equal gender relations within families and a family‐friendly/supportive society.

We demonstrate an ionic polymer artificial mechanotransducer (i-PAM) capable of simultaneously yielding an efficient wide bandwidth and a blocking force to maximize human tactile recognition in soft tactile feedback. The unique methodology in the i-PAM relies on an ionic interpenetrating nanofibrillar network that is formed at the interface of (i) an ionic thermoplastic polyurethane nanofibrillar matrix with an ionic liquid of 1-ethyl-3-methylimidazolium bis­(trifluoromethylsulfonyl)­imide ([EMIM]+[TFSI]−) and (ii) ionic poly­(3,4-ethylenedioxythiophene):poly­(styrenesulfonic acid) (PEDOT:PSS) conducting polymer electrodes with dimethyl sulfoxide and [EMIM]+[TFSI]− as additives. The i-PAM-based actuator with the ionic PEDOT:PSS exhibits a stable operation up to 200 Hz at low voltage as well as a blocking force of 0.4 mN, which can be potentially adapted to soft tactile feedback. Furthermore, on the basis of this fast i-PAM, we realized alphabet tactile rendering by using a 3 × 3 i-PAM array stimulated by a dc input of 2 V. We believe that our proposed approach can provide a rational guide to the human–machine soft haptic interface.

Ga2Te3 is of great interest because of its memory and threshold switching properties and potential for memory device application. Here, device of TiN/Ga2Te3/TiN with two terminals was fabricated and its threshold switching was investigated. Current–voltage measurements showed the ovonic threshold switching of amorphous Ga2Te3 thin films at 300 K with a high switching speed of about 10 ns. AC pulse tests showed reliable switching endurance over 109 switching cycles with the selectivity of 103. Amorphous Ga2Te3 with outstanding stability is considered as potential materials for the selector devices of cross–point memory array.

Chalcogenide materials of the amorphous phase with low band gaps were reported to show Ovonic threshold switching (OTS), making them suitable for selection devices in cross-point memory arrays. Herein, we report that ZnTe films with polycrystalline structures show OTS behavior. Nearly stoichiometric ZnTe thin films were deposited by an RF sputtering method. X-ray diffraction analysis indicated that the films were polycrystalline. The optical band gaps of the ZnTe films were estimated as 2.2 eV from UV-visible spectroscopy transmittance measurements. Photoluminescence measurements indicated the existence of deep-level defects in the ZnTe thin films. Although these ZnTe films have a polycrystalline structure with a relatively high band gap, I-V profiles show OTS characteristics, with a selectivity of over 10 4 , fast threshold switching time in the sub-10 ns scale, and thermal stability up to 400 °C. ZnTe also shows switching endurance for more than 10 9 cycles without Vth drift, maintaining its selectivity of 10 4 . Thus, we improved the threshold switching characteristics by using a wide band-gap and polycrystalline-structured ZnTe-based chalcogenide material. Post-annealing experiments indicated that the thermal budget of the ZnTe thin film was sufficient for stacked cross-point array structures, thereby overcoming a previous limitation of chalcogenide switching materials. This material is promising for application in high-density cross-point memory arrays as the selection device.