The room temperature positron annihilation lifetime for single crystalline ZnO has been measured as 164 ± 1 ps. The single component lifetime value is very close to but higher than the theoretically predicted value of ~154 ps. Photoluminescence study (at 10 K) indicates the presence of hydrogen and other defects, mainly acceptor related, in the crystal. Defects related to a lower open volume than zinc vacancies, presumably a complex with two hydrogen atoms, are the major trapping sites in the sample. The bulk positron lifetime in ZnO is expected to be a little less than 164 ps.

Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6 MeV H(+) ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378 eV (10 K). The irradiation creates an intense and narrow emission at 3.368 eV (10 K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368 eV emission indicate its origin as a 'hydrogen at oxygen vacancy' type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164 ± 1 ps) and irradiated crystal (175 ± 1 ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ∼4 × 10(17) cm(-3) (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ∼175 ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed.

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Coincidence Doppler broadening of the positron annihilation technique has been employed to identify the defects in thermally annealed 'as-received' ZnO and thermally annealed ball-milled nanocrystalline ZnO. Results indicate that a significant amount of oxygen vacancy has been created in ZnO due to annealing at about 500 • C and above. The results also indicate that the Zn vacancy created during the ball milling process can be easily removed by annealing the sample at about 500 • C and above. The defect characterization has also been correlated with the magnetic properties of ZnO.

A room temperature ferromagnetic Fe doped ZnO bulk sample has been synthesized by co-doping 2 at% Mn with 2 at% Fe in ZnO. The final firing temperature for the preparation of the Zn0.96Mn0.02Fe0.02O sample is the same as the final firing temperature for the preparation of the Zn0.98Mn0.02O sample and in this case it is found to be 490 °C. It has been found that room temperature ferromagnetism in Zn0.96Mn0.02Fe0.02O is a factor of 1.6 times more than that observed in Zn0.98Mn0.02O samples. The size of the saturation magnetic field for the Zn0.96Mn0.02Fe0.02O sample is, however, only a factor of 7 times more than that observed for nanocrystalline undoped ZnO.