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N-doped ZnO and N-Al codoped ZnO films are deposited onto glass substrate at room temperature by pulsed filtered cathodic vacuum arc deposition system. The films are characterized by X-ray diffraction, Raman spectra, UV-Vis-NIR spectrophotometer, atomic force microscopy (AFM) and Hall measurements. Films are textured along the (002) direction. AFM images reveal that surface of N-Al codoped ZnO film grown at RT is smoother than that of the N-doped ZnO (ZnO:N) film. Optical band gap of the N-Al codoped ZnO film is higher than that of N-doped ZnO (ZnO:N) film. When N-Al codoped ZnO film is compared to N-doped ZnO film, it is revealed that N-Al codoped ZnO film has a lower hole mobility of 18 cm 2 /V s, a higher hole concentration of 1.205 9 10 19 cm -3 and thus a lower electrical resistivity of 2.730 9 10 -2 ohm cm.