A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high carrier densities. Here we use ion implantation followed by rear side flash-lamp annealing (r-FLA) for the fabrication of heavily doped n-type Ge with high mobility. This approach, in contrast to conventional annealing procedures, leads to the full recrystallization of Ge films and high P activation. In this way single crystalline Ge thin films free of defects with maximum attained carrier concentrations of 2.20 ± 0.11 × 1020 cm−3 and carrier mobilities above 260 cm2/(V·s) were obtained. The obtained ultra-doped Ge films display a room-temperature plasma frequency above 1,850 cm−1, which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range.

Resonant infrared near-field optical spectroscopy provides a highly material-specific response with sub-wavelength lateral resolution of ∼ 10 nm. Here, we report on the study of the near-field response of selected paraelectric and ferroelectric materials, i.e. SrTiO 3 , LiNbO 3 , and PbZr 0.2 Ti 0.8 O 3 , showing resonances in the wavelength range from 13.0 to 15.8 µm. We investigate these materials using scattering scanning near-field optical microscopy (s-SNOM) in combination with a tunable mid-infrared free-electron laser (FEL). Fundamentally, we demonstrate that phonon-induced resonant near-field excitation is possible for both p-and s-polarized incident light, a fact that is of particular interest for the nanoscopic investigation of anisotropic and hyperbolic materials. Moreover, we exploit that near-field spectroscopy, as compared to far-field techniques, bears substantial advantages such as lower penetration depths, stronger confinement, and a high spatial resolution.The latter permits the investigation of minute material volumes, e.g. with nanoscale changes in crystallographic structure, which we prove here via near-field imaging of ferroelectric domain structures in PbZr 0.2 Ti 0.8 O 3 thin films.

We introduce a scattering-type scanning near-field infrared microscope (s-SNIM) for the local scale near-field sample analysis and spectroscopy from room temperature down to liquid helium (LHe) temperature. The extension of s-SNIM down to T = 5 K is in particular crucial for low-temperature phase transitions, e.g., for the examination of superconductors, as well as low energy excitations. The low temperature (LT) s-SNIM performance is tested with CO-IR excitation at T = 7 K using a bare Au reference and a structured Si/SiO-sample. Furthermore, we quantify the impact of local laser heating under the s-SNIM tip apex by monitoring the light-induced ferroelectric-to-paraelectric phase transition of the skyrmion-hosting multiferroic material GaVS at T = 42 K. We apply LT s-SNIM to study the spectral response of GaVS and its lateral domain structure in the ferroelectric phase by the mid-IR to THz free-electron laser-light source FELBE at the Helmholtz-Zentrum Dresden-Rossendorf, Germany. Notably, our s-SNIM is based on a non-contact atomic force microscope (AFM) and thus can be complemented in situ by various other AFM techniques, such as topography profiling, piezo-response force microscopy (PFM), and/or Kelvin-probe force microscopy (KPFM). The combination of these methods supports the comprehensive study of the mutual interplay in the topographic, electronic, and optical properties of surfaces from room temperature down to 5 K.

We optically investigate the local-scale ferroelectric domain structure of tetragonal, orthorhombic, and rhombohedral barium titanate (BTO) single crystals using scattering-type scanning near-field infrared (IR) optical microscopy (s-SNIM) at temperatures down to 150 K. Thanks to the precisely tunable narrow-band free-electron laser FELBE, we are able to explore the spectral fingerprints and IR resonances of these three phases and their domain orientations in the optical IR near-field. More clearly, every structural phase is analyzed with respect to its near-field resonances close to a wavelength of 17 μm when exploring the (111)-oriented BTO sample surface. Furthermore, near-field imaging at these resonances is performed, that clearly allows for the unambiguous optical identification of different domain orientations. Since our s-SNIM is based on a non-contact scanning force microscope, our s-SNIM findings are backed up by sample-topography and piezoresponse force microscopy (PFM) imaging, providing complementary information in an excellent match to the s-SNIM results.