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Since the first introduction of amorphous IGZO TFTs, many researchers have investigated the temperature, bias, and luminous instability mechanisms of these devices. In this paper we have developed TCAD process and device models, including hydrogen diffusion and transport to explain degradation phenomena. Our approach has been validated using measurements data.

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We have developed an ion transport model to simulate various degradation mechanisms in an amorphous InGaZnO (IGZO) thin film transistor (TFT). The simulation model reproduces the published data very well and demonstrates the evolution of charged ions in negative bias illumination stress, from which we can predict the ion contribution to the threshold voltage shift. P-3 / S. Kong