Backside Illumination (BSI) sensor with excellent optical performance has become the main-stream CMOS image sensor process. This work addressed the key factors and issues for 300mm BSI technology, including wafer distortion, silicon thickness variation, backside junction formation and dielectric film structure, thermal annealing and so on. It is demonstrated that with the optimized key process, a high performance 0.9um BSI pixel with low noise can be fabricated.

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The electron beam emitted from a so‐called multipactor cathode operated on the basis of the multipactor effect forms narrow pulses repeated at an RF frequency identical to that of the signal driving the cathode. By accelerating the beam, one can create a high‐efficiency microwave tube for amplification and multiplication having a simple construction without the velocity modulation required of a dc electron beam in such a tube as a multicavity klystron. This paper describes a simulation study of a multipactor cathode and the acceleration region of the electron beam. the study provides a guideline for an expected dynamic operation. the conversion efficiencies from the dc input power to the fundamental wave and the second and third harmonics are expected to be as high as 86%, 56% and 31%.