2010) Effect of 100 MeV O 7+ ion beam irradiation on structural, optical and electronic properties of SnO 2 thin films, Radiation Effects and Defects in Solids: Incorporating Plasma Science and Plasma Technology, 165:12, 930-937To link to this article: http://dx.In this paper, we present the impact of swift heavy ion beam irradiation on the structural, optical and electronic properties of SnO 2 thin films. Thin films were deposited using the pulsed laser deposition technique on Al 2 O 3 substrates. Atomic force microscopy, X-ray diffraction, UV-visible absorption and temperature-dependent resistivity measurements were performed to explore the morphological, structural, optical and electronic properties of the as-deposited and irradiated samples. The peak intensity of the (200) peak was found to decrease monotonously with increasing irradiation fluence. The band gap energy of the 1 × 10 11 ion/cm 2 irradiated sample was found to increase. The electrical resistivity of the samples showed a continuous increase with the irradiation fluence.

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