Background: Human respiratory syncytial virus (RSV) is one of the leading causes of respiratory infections, especially in infants and young children. Previous RSV sequencing studies have primarily focused on partial sequencing of G gene (200-300 nucleotides) for genotype characterization or diagnostics. However, the genotype assignment with G gene has not recapitulated the phylogenetic signal of other genes, and there is no consensus on RSV genotype definition.Methods: We conducted maximum likelihood phylogenetic analysis with 10 RSV individual genes and whole-genome sequence (WGS) that are published in GenBank.RSV genotypes were determined by using phylogenetic analysis and pair-wise node distances.Results: In this study, we first statistically examined the phylogenetic incongruence, rate variation for each RSV gene sequence and WGS. We then proposed a new RSV genotyping system based on a comparative analysis of WGS and the temporal distribution of strains. We also provide an RSV classification tool to perform RSV genotype assignment and a publicly accessible up-to-date instance of Nextstrain where the phylogenetic relationship of all genotypes can be explored.Conclusions: This revised RSV genotyping system will provide important information for disease surveillance, epidemiology, and vaccine development.

Flexible charge‐trap memory thin‐film transistors (CTM‐TFTs) are fabricated and characterized for next‐generation highly functional consumer electronics. Poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and 1.2‐µm‐thick polyimide (PI) films are introduced as source/drain electrodes and plastic substrates, respectively, to realize highly flexible CTM‐TFTs with conducting polymers. A uniquely structured sacrificial layer is suggested for the lithography‐compatible transfer and patterning processes of PEDOT:PSS on inorganic Al2O3 barrier layers are prepared on the PI substrates. The CTM‐TFTs show significantly improved device performance compared with those of the previous proto‐type devices, including a memory window (MW) of 16.8 V and program speed of 100 µs at a program pulse amplitude of ±20 V. Furthermore, the MWs and on/off current ratio do not shown remarkable degradation, and total variations within a range of less than 7.5% are observed even under harsh bending strains with a curvature radius of 1 mm. Additionally, the mechanical robustness of the fabricated CTM‐TFTs is quantitatively discussed based on the contributions of the conducting polymer electrode and the ultrathin PI film to further improve device performance of the flexible CTM‐TFTs.

The Spindle could be an alternative method for detaching micro-organisms, yielding a higher quality of suspensions which may be better suited for further molecular microbiological analysis.