Cd1-xMnxS (x = 0.1-0.3) nanowires were synthesized by using the chemical vapor deposition method. They all consist of a single-crystalline wurtzite CdS structure with a [010] or [011] growth direction. The X-ray diffraction pattern reveals the contraction of the lattice constants due to the incorporation of Mn. The Mn2+ emission at approximately 2.15 eV, originating from the d-d (4T1 --> 6A1) transition, appears below 50-80 K. Its decay time is in the range of 0.55-1 ms, showing a decrease with increasing Mn content. The Mn doping reduces significantly the decay time of band-edge emission from 590 ps to 20-30 ps. Upon applying magnetic field (up to 7 T), the Mn2+ emission is suppressed and donor-acceptor pair emission becomes dominant, suggesting the energy transfer from the band electrons to the Mn2+ ions.

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Articles you may be interested inMagneto-optical spectrum and the effective excitonic Zeeman splitting energies of Mn and Co-doped CdSe nanowires Magnetoluminescence in quantum dots and quantum wires of II-VI diluted magnetic semiconductors

We present the fabrication and transport characteristics of field-effect transistors based on single-crystalline (Ga,Mn)N nanowires with Mn concentrations of 2% and 5% prepared via a vapor−liquid−solid method. The (Ga,Mn)N nanowires with Mn concentrations of 2% and 5% configured as field-effect transistors exhibited n-type and p-type conductivities, respectively, and good electrical properties with an on/off current ratio of ∼102 and a subthreshold swing of 1.9−2.2 V/decade. For the (Ga,Mn)N nanowires with the Mn concentration of 5%, the negative magnetoresistance persisted up to room temperature. These results suggest the feasibility of applying dilute magnetic semiconductor nanowires in nanoscale electronics and spintronics.

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