Transport Properties in (Ga,Mn)N Nanowire Field-Effect Transistors

Abstract

We present the fabrication and transport characteristics of field-effect transistors based on single-crystalline (Ga,Mn)N nanowires with Mn concentrations of 2% and 5% prepared via a vapor−liquid−solid method. The (Ga,Mn)N nanowires with Mn concentrations of 2% and 5% configured as field-effect transistors exhibited n-type and p-type conductivities, respectively, and good electrical properties with an on/off current ratio of ∼102 and a subthreshold swing of 1.9−2.2 V/decade. For the (Ga,Mn)N nanowires with the Mn concentration of 5%, the negative magnetoresistance persisted up to room temperature. These results suggest the feasibility of applying dilute magnetic semiconductor nanowires in nanoscale electronics and spintronics.

Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

“…In contrast, Mn doped GaN (302 nm) film exhibits typical negative MR up to 50 K, whereby the MR values decreased from 5.5% to 2% as the temperature increased from 10 K and 50 K respectively. Additionally, the negative MR drastically fall down from 2% to 0.3% in the temperature range of 50-200 K. Notably, the negative magnetoresistance values obtained in the present results are comparatively higher than the previous reports [25,26]. The higher negative MR values obtained in the present study is quietly attributed to the magnetic coupling between Mn atoms in GaN.…”

Single-Crystalline Ferromagnetic Mn4Si7 Nanowires

“…In order to examine the electrical properties of the nanowires, the nanowire devices were fabricated in a back-gated field-effect transistor configuration. 17 To remove the native oxide from the nanowire surface prior to the metallization, both of the exposed ends of the nanowires were chemically etched in a 2% HF solution. The electrical properties of the nanowire devices were examined by a four-point probe method using a semiconductor parameter analyzer (HP4145B) at room temperature.…”

Ferromagnetic Fe-Doped GaN Nanowires Grown by Chemical Vapor Deposition

“…The pure GaN nanowires can be synthesized through a carbon nanotube-confined reaction . For doped GaN nanowires, the synthetic challenge mainly exists in limited solubility of transition-metal in GaN. , In the last recent years, Mn-, − Cr-, Co-, and Cu- , doped GaN nanowires have been synthesized by chemical vapor deposition (CVD), mainly using transition-metal chloride as precursors. To the best of our knowledge, there has not been any report about Fe-doped GaN nanowires, maybe due to the fairly limited solubility of Fe in GaN.…”