Epitaxial graphene thermally grown on 6H-SiC(0001) can be p-type doped via a novel surface transfer doping scheme by modifying the surface with the electron acceptor, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Synchrotron-based high-resolution photoemission spectroscopy reveals that electron transfer from graphene to adsorbed F4-TCNQ is responsible for the p-type doping of graphene. This novel surface transfer doping scheme by surface modification with appropriate molecular acceptors represents a simple and effective method to nondestructively dope epitaxial graphene for future nanoelectronics applications.

One of the main goals of organic and molecular electronics is to relate the performance and electronic function of devices to the chemical structure and intermolecular interactions of the organic component inside them, which can take the form of an organic thin film, a self-assembled monolayer or a single molecule. This goal is difficult to achieve because organic and molecular electronic devices are complex physical-organic systems that consist of at least two electrodes, an organic component and two (different) organic/inorganic interfaces. Singling out the contribution of each of these components remains challenging. So far, strong π-π interactions have mainly been considered for the rational design and optimization of the performances of organic electronic devices, and weaker intermolecular interactions have largely been ignored. Here, we show experimentally that subtle changes in the intermolecular van der Waals interactions in the active component of a molecular diode dramatically impact the performance of the device. In particular, we observe an odd-even effect as the number of alkyl units is varied in a ferrocene-alkanethiolate self-assembled monolayer. As a result of a more favourable van der Waals interaction, junctions made from an odd number of alkyl units have a lower packing energy (by ∼0.4-0.6 kcal mol(-1)), rectify currents 10 times more efficiently, give a 10% higher yield in working devices, and can be made two to three times more reproducibly than junctions made from an even number of alkyl units.

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Organic-organic heterojunctions (OOHs) are critical features in organic lightemitting diodes, ambipolar organic fi eld-effect transistors and organic solar cells, which are fundamental building blocks in low-cost, large-scale, and fl exible electronics. Due to the highly anisotropic nature of π -conjugated molecules, the molecular orientation of organic thin fi lms can signifi cantly affect the device performance, such as light absorption and charge-carrier transport, as well as the energy level alignment at OOH interfaces. This Feature Article highlights recent progress in the understanding of interface energetics at small molecule OOH interfaces, focusing on the characterization and fabrication of OOH with well-defi ned molecular orientations using a combination of in situ low-temperature scanning tunneling microscopy, synchrotron-based high-resolution ultraviolet photoelectron spectroscopy and near-edge X-ray absorption fi ne structure measurements. The orientation dependent energy level alignments at the OOH interfaces will be discussed in detail.

Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high breakdown field of 8 MV/cm, and high thermal stability. These properties enable Ga2O3 a promising material for a large range of applications, such as high power electronic devices and solar-blind ultraviolet (UV) photodetectors. In the past few years, a significant process has been made for the growth of high-quality bulk crystals and thin films and device optimizations for power electronics and solar blind UV detection. However, many challenges remain, including the difficulty in p-type doping, a large density of unintentional electron carriers and defects/impurities, and issues with the device process (contact, dielectrics, and surface passivation), and so on. The purpose of this article is to provide a timely review on the fundamental understanding of the semiconductor physics and chemistry of Ga2O3 in terms of electronic band structures, optical properties, and chemistry of defects and impurity doping. Recent progress and perspectives on epitaxial thin film growth, chemical and physical properties of defects and impurities, p-type doping, and ternary alloys with In2O3 and Al2O3 will be discussed.