To compare the efficacy and safety of metformin, glyburide, and insulin in treating gestational diabetes mellitus (GDM), a meta-analysis of randomized controlled trials (RCTs) was conducted. PubMed, Embase, CINAHL, Web of Science, and Cochrane Library to November 13, 2018, were searched for RCT adjusted estimates of the efficacy and safety of metformin, glyburide, and insulin treatments in GDM patients. There were 41 studies involving 7703 GDM patients which were included in this meta-analysis; 12 primary outcomes and 24 secondary outcomes were detected and analyzed. Compared with metformin, insulin had a significant increase in the risk of preeclampsia (RR, 0.57; 95% CI, 0.45 to 0.72; P<0.001), NICU admission (RR, 0.75; 95% CI, 0.64 to 0.87; P<0.001), neonatal hypoglycemia (RR, 0.57; 95% CI, 0.49 to 0.66; P<0.001), and macrosomia (RR, 0.68; 95% CI, 0.55 to 0.86; P<0.05). To the outcomes of birth weight and gestational age at delivery, insulin had a significant increase when compared with metformin (MD, 114.48; 95% CI, 37.32 to 191.64; P<0.01; MD, 0.23; 95% CI, 0.12 to 0.34; P<0.001; respectively). Of the two groups between glyburide and metformin, metformin had lower gestational weight gain compared with glyburide (MD, 1.67; 95% CI, 0.26 to 3.07; P<0.05). Glyburide had a higher risk of neonatal hypoglycemia compared with insulin (RR, 1.76; 95% CI, 1.32 to 2.36; P<0.001). This meta-analysis found that metformin could be a safe and effective treatment for GDM. However, clinicians should pay attention on the long-term offspring outcomes of the relative data with GDM patients treated with metformin. Compared with insulin, glyburide had a higher increase of neonatal hypoglycemia. The use of glyburide in pregnancy for GDM women appears to be unclear.

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In this paper, the SiC planar MOSFET with built-in reverse MOS-channel diode (SiC MCD-MOSFET) is investigated utilizing TCAD simulation tools. When the device is working as a freewheeling diode, the operation of the parasitic body diode is suppressed effectively due to the lower threshold voltage of the MCD. Therefore, the bipolar degradation issue can be completely solved. In addition, the SiC MCD-MOSFET is featuring superior dynamic characteristics. The input capacitance (CISS), reverse transfer capacitance (C RSS), gate charge (Q G) and gate-to-drain charge (Q GD) are reduced by a factor of ~2, ~7, ~2 and ~10, respectively, as compared to the conventional SiC MOSFET (SiC C-MOSFET). Combined with the slightly increased on-resistance (R ON), tremendously enhanced figures of merit (R ON ×Q G and R ON ×Q GD are decreased by a factor of 1.8 and 9, respectively) are obtained in the SiC MCD-MOSFET. The outstanding performance and easy-to-implement feature make the SiC MCD-MOSFET more attractive for further power electronic applications. Index Terms SiC planar MOSFETs, bipolar degradation, dynamic performance.