The effects of 600 eV electron irradiation on adsorbed layers of trimethylamine (TMA) on a Si(100) surface at 100 K were studied using high-resolution electron energy loss spectroscopy (HREELS), temperature programmed desorption (TPD), electron-stimulated desorption (ESD) and x-ray photoelectron spectroscopy (XPS). Experiments were performed at monolayer and higher coverages. The ESD results obtained on physisorbed TMA indicate electron-induced decomposition of the parent molecule. The HREELS data also show cleavage of N-C bonds on the chemisorbed layer of TMA and deposition of CH x groups on the surface, which is also supported by a dramatic enhancement of hydrogen desorption at 960 K following electron irradiation. This multiple-step process is supported by ESD signal decay curves obtained during electron irradiation. Following electron irradiation of TMA/Si(100), the intensity of low temperature TPD peaks corresponding to TMA fragments decreases; however, the intensity of the mass 2 peak increases dramatically compared with the un-irradiated surface. This is indicative of electron-induced associative desorption of molecular hydrogen. The HREELS data from monolayer coverage of TMA on Si(100) after electron irradiation suggests the removal of CH x groups from the adsorbate layer and deposition of carbon and hydrogen on the surface. In the absence of physisorbed layers there is no indication of electron-induced desorption of TMA fragments.

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The data were taken with a spectrometer described by Robinson 6 and modified by Dutcher and Scott. 7 The frequency measurements were conventional. The frequen-