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Ultrafast heating of photoionized free electrons by high-numerical-aperture (0.25–0.65) focused visible-range ultrashort laser pulses provides their resonant impact trapping into intra-gap electronic states of point defect centers in a natural IaA/B diamond with a high concentration of poorly aggregated nitrogen impurity atoms. This excites fine-structured, broadband (UV-near-infrared) polychromatic luminescence of the centers over the entire bandgap. The observed luminescence spectra revealed substitutional nitrogen interaction with non-equilibrium intrinsic carbon vacancies, produced simultaneously as Frenkel “vacancy-interstitial” pairs during the laser exposure.

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Excitation of type IIb synthetic diamond by ultrashort laser pulses in the visible range causes broadband luminescence in the UV visible range; the observed luminescence band can be attributed to the A band characteristic of diamonds. The photoluminescence spectra were obtained at different laser pulse durations (0.3-6.2 ps) depending on the pulse energy. A nonlinear dependence of the luminescence yield on the intensity of ultrashort pulses is established. Keywords: broadband luminescence, boron doped diamond, two-photon luminescence, A-band.