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Structure, preparation, current-voltage and capacitance-voltage characteristics (measured in the temperature range of 80 -320 K) of Al/a-SiGe : H/c-Si diodes are presented and discussed. The forward currentvoltage characteristics of the diodes are exponential at low biases and quadratic at high biases. The latter feature is connected with the H-content of the amorphous layer, and is probably due to the doubleinjection space-charge limited current mechanism. The anomalies of the capacitance -voltage characteristics are due to the contributions of deep levels present in the amorphous SiGe layer.Introduction Amorphous-crystalline heterojunctions and metal-amorphous-crystalline Schottky structures have been widely studied for their unusual electrical behaviour and for their application in the field of optoelectronics and solar cells [1][2][3][4]. In this work a new type of heterodevices, the metalamorphous i-monocrystalline p heterodiode, namely the Al/a-SiGe:H/c-Si m-i-p diode, is reported. This diode exhibits a unique rectifying behaviour concerning its quadratic forward current-voltage characteristics: the forward current is proportional to the square of the forward bias.