The structural defects in two-dimensional transition metal dichalcogenides, including point defects, dislocations and grain boundaries, are scarcely considered regarding their potential to manipulate the electrical and optical properties of this class of materials, notwithstanding the significant advances already made. Indeed, impurities and vacancies may influence the exciton population, create disorder-induced localization, as well as modify the electrical behaviour of the material. Here we report on the experimental evidence, confirmed by ab initio calculations, that sulfur vacancies give rise to a novel near-infrared emission peak around 0.75 eV in exfoliated MoS2 flakes. In addition, we demonstrate an excess of sulfur vacancies at the flake's edges by means of cathodoluminescence mapping, aberration-corrected transmission electron microscopy imaging and electron energy loss analyses. Moreover, we show that ripplocations, extended line defects peculiar to this material, broaden and redshift the MoS2 indirect bandgap emission.

Diffraction profiles of curved Si and GaAs crystals obtained by a controlled damage process on one side of planar crystals have been investigated at X-ray energies E = 17, 59 and 120 keV. At E = 17 and 59 keV in the condition of slight curvature, that is when the diffracting plane bending over the extinction length is lower than the Darwin width, the Laue diffraction profiles with lattice planes parallel or inclined with respect to the curvature radius R show an enhancement of integrated intensity proportional to 1/R, much larger than in the corresponding perfect bent crystals. At E = 120 keV, in the condition of strong curvature, the crystals behave as bent perfect crystals with integrated intensity corresponding to that of a mosaic crystal. These crystals are proposed as optical elements for focusing hard X-ray beams.

We will describe the LAUE project, supported by the Italian Space Agency, whose aim is to demonstrate the capability to build a focusing optics in the hard X-/soft gamma-ray domain (80-600 keV). To show the lens feasibility, the assembling of a Laue lens petal prototype with 20 m focal length is ongoing. Indeed, a feasibility study, within the LAUE project, has demonstrated that a Laue lens made of petals is feasible. Our goal is a lens in the 80-600 keV energy band. In addition to a detailed description of the new LARIX facility, in which the lens is being assembled, we will report the results of the project obtained so far.

Future large X-ray observatories like ATHENA will be equipped with very large optics, obtained by assembling modular optical elements, named X-ray Optical Units (XOU) based on the technology of either Silicon Pore Optics or Slumped Glass Optics. In both cases, the final quality of the modular optic (a 5 arcsec HEW requirement for ATHENA) is determined by the accuracy alignment of the XOUs within the assembly, but also by the angular resolution of the individual XOU. This is affected by the mirror shape accuracy, its surface roughness, and the mutual alignment of the mirrors within the XOU itself. Because of the large number of XOUs to be produced, quality tests need to be routinely done to select the most performing stacked blocks, to be integrated into the final optic. In addition to the usual metrology based on profile and roughness measurements, a direct measurement with a broad, parallel, collimated and uniform Xray beam would be the most reliable test, without the need of a focal spot reconstruction as usually done in synchrotron light. To this end, we designed the BEaTriX (Beam Expander Testing X-ray facility) to be realized at INAF-OAB, devoted to the functional tests of the XOUs. A grazing incidence parabolic mirror and an asymmetrically cut crystal will produce a parallel X-ray beam broad enough to illuminate the entire aperture of the focusing elements. An X-ray camera at the focal distance from the mirrors will directly record the image. The selection of different crystals will enable to test the XOUs in the 1 -5 keV range, included in the X-ray energy band of ATHENA (0.2-12 keV). In this paper we discuss a possible BEaTriX facility implementation. We also show a preliminary performance simulation of the optical system.

We report the results obtained from the characterization of bent Silicon, Germanium and Gallium Arsenide crystals, which are being used for focusing photons in the 90-300 keV energy range, in the framework of the LAUE project. Such crystals represent the best choice for building Laue lenses thanks to their high reflectivity and to the narrow Point Spread Function (PSF) they can provide. The test aims to select the best material, to optimize the thickness and to estimate the curvature radius of the crystal tiles that will be used for building a 20 m focal length Laue lens petal