A self-consistent calculation of the density of states and the spectral density function is performed in a two-dimensional spin-polarized hole system based on a multiple-scattering approximation. Using parameters corresponding to GaMnAs thin layers, a wide range of Mn concentrations and hole densities have been explored to understand the nature, localized or extended, of the spin-polarized holes at the Fermi level for several values of the average magnetization of the Mn system. We show that, for a certain interval of Mn and hole densities, an increase on the magnetic order of the Mn ions come together with a change of the nature of the states at the Fermi level. This fact provides a delocalization of spin-polarized extended states anti-aligned to the average Mn magnetization, and a higher spin-polarization of the hole gas. These results are consistent with the occurrence of ferromagnetism with relatively high transition temperatures observed in some thin film samples and multilayered structures of this material.

We use Monte Carlo simulations to analyze electric-field control of Curie temperature TC for carrier-mediated ferromagnetism in semiconductors. Gating employed to achieve electrostatic doping in optimized geometry of (Ga,Mn)As, a prototypical ferromagnetic semiconductor, reveals a highly-tunable ferromagnetic order. We show the feasibility of ∆TC > 100 K, an order of magnitude greater then the state-of-the-art measurements, at fields substantially smaller then the breakdown values. Such controllable ferromagnetism may help elucidate the mechanism of carrier-mediated magnetism in various semiconductors and offer versatile spintronic applications.

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The interplay between disorder and spin polarization in a GaMnAs thin layer results into spin-polarized impurity hole bands. A figure of merit is defined to label the nature of the sample as metallic or nonmetallic. It is shown that samples with the highest figures of merit have a ratio between the extended hole density and the Mn concentration near 0.2, in agreement with the ratio of 0.1–0.25 known to occur among samples produced with the highest Curie temperatures. Both the nonmetal-to-metal and the metal-to-nonmetal transitions experimentally observed in the ferromagnetic regime are obtained as the Mn concentration increases.

We investigate the spin-polarized transport of GaMnAs nanolayers in which a ferromagnetic order exists below a certain transition temperature. Our calculation for the self-averaged resistivity takes into account the existence of an impurity band determining the extended ("metallic" transport) or localized (hopping by thermal excitation) nature of the states at and near the Fermi level. Magnetic order and resistivity are inter-related due to the influence of the spin polarization of the impurity band and the effect of the Zeeman splitting on the mobility edge. We obtain, for a given range of Mn concentration and carrier density, a "metallic" behavior in which the transport by extended carriers dominates at low temperature, and is dominated by the thermally excited localized carriers near and above the transition temperature. This gives rise to a conspicuous hump of the resistivity which has been experimentally observed and brings light onto the relationship between transport and magnetic properties of this material.