EO/IR Sensors and imagers using nanostructure based materials are being developed for a variety of Defense Applications. In this paper, we will discuss recent modeling effort and the experimental work under way for development of next generation carbon nanostructure based infrared detectors and arrays. We will discuss detector concepts that will provide next generation high performance, high frame rate, and uncooled nanobolometer for MWIR and LWIR bands. The critical technologies being developed include carbon nanostructure growth, characterization, optical and electronic properties that show the feasibility for IR detection. Experimental results on CNT nanostructures will be presented. We will discuss the path forward to demonstrate enhanced IR sensitivity and larger arrays. TECHNICAL DISCUSSIONThe microbolometer based on Si-MEMS device structure has been under development for over 20 years with support from DARPA and the Army. Two most common Si-MEMS based structures utilize VOx and amorphous silicon based technologies. Several companies such as BAE systems and DRS Technologies are developing and producing 17 micron unit cell 640x 480 and larger arrays using VOx [1,2]. Similarly, L3Communications and French group are developing and producing 640x480 with 17 micron unit cell using amorphous-Silicon technology [3,4].We are exploring the use of carbon nanostructures for use as the high performance bolometric element of the MWIR and LWIR bands. As part of this effort, we are exploring development of smaller unit cell bolometer .i.e. 5-10 micron unit cell, with higher TCR and higher frequency response in the 1 to 10 KHz range. The Infrared Sensors, Devices, and Applications; and Single Photon Imaging II, edited

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ZnO has distinct advantages over competing technologies such as GaN. Two advantages are the inherent improvement in ultraviolet (UV) brightness, necessary for the biological sensor application where the signal-to-noise ratio (SNR) is enhanced by a bright UV source, and the second is the availability of ZnO lattice-matched substrates, which will result in lower defect densities than GaN, higher manufacturing yield, and then lower cost. The ZnO material system's advantage in exciton binding energy of 60 MeV, a three-time improvement over GaN, will result in UV emitters with superior performance. 1

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In this paper we will present innovative design approach for UV Focal Plane Array for Photon Counting Applications. This Focal Plane includes the building a large area silicon micro-channel plate (MCP) using GaN photocathode. In this paper, we will present the design and simulation of silicon micro-channel plate with GaN photocathode with large area array with 2 micron pores and 3 micron pitch. We will also present results for the ICP-RIE process to fabricate 2 micron pores, and Growth of high conductivity GaN photocathodes using MOCVD to produce 40% QE.We will also discuss approaches for development of readout architecture and circuit for Silicon based MCP 4096x4096 UV FPA. The readout architecture scheme uses a series of charge sensitive amplifiers (CSA) to boost the charge received on each anode. The signal from each CSA is then passed into a shaping amplifier (SA) that produces a smooth waveform. The peak of the smoothed waveform is captured by a sample and hold (S/H) circuit that holds the signal until an analog to digital (A/D) converter can sample it. Details of the ROIC circuit will be presented.