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A new procedure described to manipulate the spin reorientation transition (SRT) in ultrathin ferromagnetic films, i.e., the oxygen assisted surfactant growth of Ni monolayers (ML), reduces the surface anisotropy energy. This in turn shifts the SRT down by about 5 ML. Through first principles calculations based on the full potential linearized augmented plane wave method, these characteristics are explained at the electronic structure level. The combination of experiment and theory allows us to specify the mechanism. This will be important for further engineering of new nanostructures.

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The magnetic properties of two epitaxial Fe 3 Si/ GaAs͑001͒ hybrid structures are studied using ferromagnetic resonance. The results from the angular dependence of the excited uniform mode enable a precise determination of the magnetic anisotropy fields in this ferromagnet/semiconductor hybrid structure. The samples differ in their Si content ͑one stoichiometric sample with 25.5% and one Fe-rich with 16.5% Si͒. Moderate effective magnetizations of 4M eff = 10.1 kG and 13.5 kG, respectively, were found. In addition, depending on the Si content in the Heusler-like alloy, a small but pronounced uniaxial in-plane anisotropy field of 2K 2ʈ / M = −6 to − 32 Oe with the easy axis rotated by 45°with respect to the easy axis of the larger fourfold anisotropy exists.

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