Gallium Nitride , superior physical the RF characteristics, often known as frequency properties, in comparison with other semiconductors, dispersion effects in Nitrides. In such context, make GaN HEMT active devices a prime candidate in the AlGaN/GaN HEMTs require a precise device technology implementation of next generation transmitters for radar optimization, a critical characterization phase and an systems, 3G/4G base stations and WiMAX In this accurate and verified large-signal modelling. All these contribution, the characterization, modelling and three aspects are analyzed in this contribution.verification of di,ferent families of high efficiency, highpower devices manufactured at SELEX Sistemi IntegratiIn Section II, GaN HEMT technology is presented, are reported. Process, characterization and modelling together with the resulting physical structure. In Section phases are analyzed to improve and refine the III, active device characterization and modelling steps are technology s fabrication techniques, thermal degradation described in detail. Finally, to validate the modelling issues and dispersion phenomena.approach, the experimental results of active load-pull Keywords measurements on a GaN HEMT are presented in Section GaN Technology, FETs characterization, load pull.IV.