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In this paper, we investigate a volume fraction, electromagnetic field, photothermal, and initial stress impact on a homogeneous isotropic semiconducting generalized thermoelasticity solid. Three generalized thermoelasticity theories are considered: classical dynamical (CD), Lord and Shulman (LS), and dual‐phase‐lags (DPL). The equations governing the problem are presented considering the voids, photothermal, semiconducting, initial stress, and parameters concerning the theory of thermoelasticity in a generalized form. We applied the normal mode technique analysis to solve the algebraic system of equations in this phenomenon under suitable boundary conditions. The results showed that the photothermal, voids as a volume fraction, process of semiconductor, electromagnetic field, thermal relaxation times, and initial stress have a significant impact on the phenomenon. The physical quantities with some analytical comparisons are introduced analytically and displayed in graphs. A comparison was made between the obtained results and the works presented by others. If the volume fraction, electromagnetic field, and initial stress are neglected, the results obtained are deduced to Abo‐Dahab and Lotfy as a special case from the present study. The results obtained with neglecting the external parameters, viz, electromagnetic field, initial stress, voids, and phase lags, and considering the Laplace transform technique agree with the results of other works.