In this paper, we report an analysis of electrical bias stress instability in amorphous InGaZnO (a-IGZO) thinfilm transistors (TFTs). Understanding the variations of TFT characteristics under an electrical bias stress is important for commercial goals. In this experiment, the positive gate bias is initially applied to the tested a-IGZO TFTs, and subsequently, the negative gate bias is applied to the TFTs. For comparison with the subsequently negative-gate-bias-applied TFTs, another experiment is performed by directly applying the negative gate bias to the tested TFTs. For the positive gate bias stress, a positive shift in the threshold voltage (V th ) with no apparent change in the subthreshold swing (S SUB ) is observed. On the other hand, when the negative gate bias is subsequently applied, the TFTs exhibit higher mobility with no significant change in S SUB , whereas the shift of the V th is much smaller than that in the positive gate bias stress case. These phenomena are most likely induced by positively charged donor-like subgap density of states and the detrapping of trapped interface charge during the positive gate bias stress. The proposed mechanism was verified by device simulation. Thus, the proposed model can explain the instability for both positive and negative bias stresses in a-IGZO TFTs.Index Terms-Density of states (DOS), electrical instability, InGaZnO (IGZO), modeling, thin-film transistors (TFTs).

The effects of Ga composition on the performance of InGaZnO (IGZO) thin-film transistors (TFTs) prepared by a sol-gel method are investigated, and the density of states (DOS) is characterized by the device modeling. The TFT mode is changed from a depletion type to an enhancement type, and the extracted DOS parameters are reduced with the increase of Ga contents. The extracted DOS distribution has a higher peak value than that of an IGZO TFT prepared by physical vapor deposition. Index Terms-Density of states (DOS), InGaZnO (IGZO), modeling, thin-film transistors (TFTs).