The chemical oxidation of hydrogen-terminated silicon (111) surfaces in water was studied in situ with Fourier transform IR spectroscopy in the multiple total internal reflection mode. On the basis of measurements of the absorbance of the Si-H and Si-O-Si vibrations as a function of time it is concluded that reactions involving the oxidation of silicon hydride and the formation of silicon oxide are coupled. The decrease in the hydride coverage and increase in the oxide coverage are linear functions of ln(t). The time dependence of oxide growth is explained in terms of electrostatic and mechanical changes at the Si/water interface.

The initial stages of electrochemical intercalation of lithium in sputter-deposited tungsten oxide thin films were studied. The as-deposited films show a substantial irreversible uptake of lithium without an electrochromic effect. This trapping of lithium is associated with the presence of excess oxygen in the film. The experimental results are consistent with a reaction of lithium and interstitial oxygen to form a neutral Li2−Oi complex. Our findings are relevant for the manufacture of electrochromic devices, and the electrochemical titration method used may be applied to probe excess oxygen in other oxidic films as well.

A production-ready scanning LCD backlight system for TV sets of 32" and larger has been designed. It improves the representation of moving objects and allows fast and deep dimming for higher contrast. This paper describes the architectural choices made for these designs.

It is shown that polymer-stabilized Pd particles, adsorbed on Si, initiate the growth of electroless Ni. The influence of the polymer (poly(vinylpyrro1idone)) on the particle size and on the surface coverage is described. While Pd particles adsorb strongly on Si, almost no adsorption is observed on SiO2. Implications of this adsorption selectivity for the production of high-resolution metal patterns on Si are briefly discussed. IntroductionDarticles/cm2 for a Si(100) surface). The Pd deDosition The wet-chemical metalization of semiconductors is of considerable industrial importance. In practice, this is usually achieved by electroless plating. For electroless deposition of a metal layer (e.g. Nil, the substrate is immersed in a solution containing a reducing agent (hypophosphite) and metal ions (Ni2+). The reduction of Ni2+ by hypophosphite (eq 1) has a high activation energy and occurs at a significant rate only in the presence of a catalyst. If hypophosphite is used as the reducing agent, a small amount (9.8 w t % at pH 4) of phosphorus is incorporated during the deposition of an electroless Ni layer. The phosphorus concentration in the layer depends on the temperature and the pH ofthe electroless solution.2 In order to confine reaction 1 to the substrate to be plated, its surface has to be catalytically activated. Palladium has proven to be a good catalyst for the initiation of Ni3,4 and Cu5 deposition from an electroless solution.

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