Plasma surface conditioning is now a commonly accepted practice in many applications. Three types of plasma systems are commonly commercially used: low pressure (LP), atmospheric plasma (AP) and corona (CP). This paper compares the attributes of each of these available types. We suggest there are many applications well suited to the use of atmospheric plasma jet in electronic manufacturing. This paper provides examples of the benefits of using atmospheric plasma for applications including: improving adhesion by plasma surface modification, reduction of metal oxide surfaces and deposition of protective barrier layers for LEDs. These examples demonstrate the unique potential of atmospheric plasma jets to provide advantages in applications important in electronic assembly and manufacturing including initial characterization data, references to final applications and next steps.

With the advent of bumped die new IC packages evolved: for low IO WLCSP (wafer level chip scale package), for high IO FC (flip chip) CBGA (ceramic ball grid array) and PBGA (plastic ball grid array). For low IO, protected CSP is an emerging and rapidly growing market. In 2020 the market exceeded $2B and is ramping to a forecast $2.5B by 2025.1 Initially WLCSP, also known as FI (fan in), packages were built on the wafer with no active side protection evolving to single sided protection from a package built on the wafer2 which transition to redistribution PSB (passivation stress buffer)3, PSBs were used on FC wafers for high IO BGA packages. These provided acceptable performance initially, however as devices became more complex and reliability requirements increased, these processes no longer provided the required reliability. To attain higher IO capability and better reliability performance evolved to CSP4 (non-WL) which allowed larger area for bump distribution and additional protection to the rest of the exposed die surfaces. Fully protected die CSP (without substrates or leadframes) was initially implemented with processes such as M-series utilizing a FO (fan out) process.5 To obtain higher reliability 6-sided die protection afforded by M-series type processes require die reconstitution, expensive tapes, molding, and other operations generally required in a FO process which can feasibly be eliminated in a WLCSP protected FI process. American Semiconductor's Semiconductor-on-Polymer™ (SoP™) 300mm FleX-TM WLCSP is an advanced packaging process optimized for protected fan-in. FleX-TM produces the thinnest and lowest cost protected FI the industry today. Protected FI process innovations can improve performance in power devices, RF switches, die stacking and thin board applications. This article includes background on the evolution of CSP and the comparison of SOTA (state of the art) FI processes including FleX-TM.

With the advent of bumped die, new IC packages evolved: for low IO WLCSP (wafer level chip scale package), for high IO FC (flip chip), CBGA (ceramic ball grid array), and PBGA (plastic ball grid array). For low IO, protected CSP is an emerging and rapidly growing market. In 2020 the market exceeded $2B and is ramping to a forecast $2.5B by 2025.1 Initially WLCSP, also known as FI (fan in), was built on the wafer with no active side protection, evolving to single sided protection from a package built on the wafer3 , which transitioned to redistribution PSB (passivation stress buffer)4 . PSBs were implemented in FC wafers for high IO BGA packages. These provided acceptable performance initially, however as devices became more complex and reliability requirements increased, these processes no longer provided the required reliability. To attain higher IO capability and better reliability, performance evolved to CSP5 (non-WL) which allowed larger area for bump distribution and additional protection to the rest of the exposed die surfaces. An example of fully protected die CSP (without substrates or leadframes) encapsulated in mold compound is M-series utilizing a FO (fan out) processes and eWLB.6,7 To obtain higher reliability 6-sided die protection afforded by FO processes require die reconstitution, expensive tapes, molding, and other operations which can feasibly be eliminated in a WLCSP protected FI process assuming full encapsulation can be attained on the original device wafer. American Semiconductor’s Semiconductor-on-Polymer (SoP) 300mm SoP-TM, a P-WLCSP process, is an advanced packaging process optimized for protected fan-in. SoP-TM produces the thinnest and lowest cost fully protected FI. Protected FI process innovations can improve performance in power devices, RF switches, die stacking and thin board applications. This paper includes background on the evolution of CSP, comparison of SOTA (state of the art) FI processes including SoP-TM and builds on low-cost wafer level adaptive process works and reliability data presented on the new SoP-TM process earlier this year.8,9 First article electrical reliability test data for P-WLCSP, adaptive processing of micro-bump pads, and potential applications in hybrid modules will be shown.