We systematically measure and analyze the spin diffusion length and the spin Hall effect in Pt with a wide range of conductivities using the spin absorption method in lateral spin valve devices. We observe a linear relation between the spin diffusion length and the conductivity, evidencing that the spin relaxation in Pt is governed by the Elliott-Yafet mechanism. We find a single intrinsic spin Hall conductivity ( =1600150  -1 cm -1 ) for Pt in the full range studied which is in good agreement with theory. For the first time we have obtained the crossover between the moderately dirty and the superclean scaling regimes of the spin Hall effect by tuning the conductivity. This is equivalent to that obtained for the anomalous Hall effect. Our results explain the spread of the spin Hall angle values in the literature and find a route to maximize this important parameter.Spin-orbit interaction is an essential ingredient in solid state physics [1,2] that has been gaining interest in the last decade due to the advantages it offers to exploit the coupling between spin and orbital momentum of electrons in spintronic devices, leading to the emerging field of spin-orbitronics [3]. The discovery of new charge-to-spin current conversion effects such as the spin Hall effect (SHE) [4,5,6,7], the Rashba-Edelstein effect (REE) [8,9,10] or the spin-momentum locking (SML) in topological insulators [11,12,13] is expanding the possibility to create and detect spin currents without using ferromagnets (FM) or magnetic fields. For instance, magnetization switching of ferromagnetic elements has been recently achieved with torques arising from SHE [14], REE [15] or SML [16], and new spindependent phenomena such as the spin Seebeck effect [17] or spin pumping [18] have been discovered by using SHE to detect spin currents.The SHE is thus the crucial effect behind this breakthrough. Although it was predicted theoretically by Dyakonov and Perel 45 years ago [1] and revisited by Hirsch in 1999 [4], it took a bit longer to observe the first direct experimental evidences in semiconductors [19] and metals [6,7,18]. The SHE in a non-magnet (NM) basically shares the same origin as the anomalous Hall effect (AHE) in FMs: in both effects, the spin-orbit coupling generates the opposite deflection of the spin-up and spin-down electrons in a charge current, leading to a

We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [PRL 99, 126601 (2007)]. The angular dependence of this magnetoresistance resembles the recently discovered spin Hall magnetoresistance in Pt/Y 3 Fe 5 O 12 bilayers, although the presence of a ferromagnetic insulator is not required. We show that this Hanle magnetoresistance is an alternative, simple way to quantitatively study the coupling between charge and spin currents in metals with strong spin-orbit coupling.Spin-orbit interaction is an essential ingredient in materials and interfaces, offering the possibility to exploit the coupling between spin and orbital degrees of freedom of electrons in spintronic devices [1,2]. Of utmost importance are the spin Hall (SHE) and inverse spin Hall (ISHE) effects, which convert charge currents into transverse spin currents and vice versa, allowing us to create and detect spin currents in materials with strong spin-orbit coupling (SOC) [3][4][5][6][7][8]. In this framework, a new type of magnetoresistance (MR), spin Hall magnetoresistance (SMR), was discovered in nonmagnetic (NM) metal/ferromagnetic insulator (FMI) bilayers [9][10][11][12][13][14][15][16]. SMR arises from the simultaneous effect of SHE and ISHE in the NM layer -which leads to a decrease in its resistance-combined with the presence of a FMI at one of

Electrical generation and detection of pure spin currents without the need of magnetic materials are key elements for the realization of full electrically controlled spintronic devices. In this framework, achieving a large spin-to-charge conversion signal is crucial, as considerable outputs are needed for plausible applications. Unfortunately, the values obtained so far have been rather low. Here we exploit the spin Hall effect by using Pt, a non-magnetic metal with strong spin-orbit coupling, to generate and detect pure spin currents in a few-layer graphene channel. Furthermore, the outstanding properties of graphene, with long-distance spin transport and higher electrical resistivity than metals, allow us to achieve in our graphene/Pt lateral heterostructures the largest spin-to-charge output voltage at room temperature reported so far in the literature. Our approach opens up exciting opportunities towards the implementation of spin-orbit-based logic circuits and all electrical control of spin information without magnetic field.

Spin-to-charge current interconversions are widely exploited for the generation and detection of pure spin currents and are key ingredients for future spintronic devices including spin-orbit torques and spin-orbit logic circuits. In case of the spin Hall effect, different mechanisms contribute to the phenomenon and determining the leading contribution is peremptory for achieving the largest conversion efficiencies. Here, we experimentally demonstrate the dominance of the intrinsic mechanism of the spin Hall effect in highly-resistive Ta. We obtain an intrinsic spin Hall conductivity for β-Ta of -820±120 (ħ/e) Ω -1 cm -1 from spin absorption experiments in a large set of lateral spin valve devices. The predominance of the intrinsic mechanism in Ta allows us to linearly enhance the spin Hall angle by tuning the resistivity of Ta, reaching up to -35±3 %, the largest reported value for a pure metal.Condensed matter systems with strong spin-orbit coupling (SOC) are extensively studied in the emerging field of spin-orbitronics due to the novel effects and functionalities originated from the interplay between the charge and the spin of electrons. The spin Hall effect (SHE) in heavy metals [1,2] and Edelstein effect in Rashba interfaces [3,4,5] or in the Dirac surface states of topological insulators [3,6] are some of the phenomena discovered in this field. They all lead to spin-to-charge current interconversions, which are essential for future spin-orbit-based technological applications such as spin-orbit torques for magnetization switching [7,8,9,10] or spin-orbit logic [11,12].

We report a study of the structural, vibrational, and electronic properties of layered monoclinic arsenic telluride (α-As 2 Te 3 ) at high pressures. Powder x-ray diffraction and Raman scattering measurements up to 17 GPa have been complemented with ab initio total-energy, lattice dynamics, and electronic band structure calculations. Our measurements, which include previously unreported Raman scattering measurements for crystalline α-As 2 Te 3 , show that this compound undergoes a reversible phase transition above 14 GPa at room temperature. The monoclinic crystalline structure of α-As 2 Te 3 and its behavior under compression are analysed by means of the compressibility tensor. Major structural and vibrational changes are observed in the range between 2 and 4 GPa and can be ascribed to the strengthening of interlayer bonds. No evidence of any isostructural phase transition has been observed in α-As 2 Te 3 . A comparison with other group-15 sesquichalcogenides allows understanding the structure of α-As 2 Te 3 and its behavior under compression based on the activity of the cation lone electron pair in these compounds. Finally, our electronic band structure calculations show that α-As 2 Te 3 is a semiconductor at 1 atm, which undergoes a trivial semiconducting-metal transition above 4 GPa.The absence of a pressure-induced electronic topological transition in α-As 2 Te 3 is discussed.