In this study, the contribution of grain boundaries to the oxygen reduction and diffusion kinetics of La0.8Sr0.2MnO3 (LSM) thin films is investigated. Polycrystalline LSM thin films with columnar grains of different grain sizes as well as epitaxial thin films were prepared by pulsed laser deposition. (18)O tracer exchange experiments were performed at temperatures from 570 °C to 810 °C and subsequently analyzed by secondary ion mass spectrometry (SIMS). The isotope concentration depth profiles of polycrystalline films clearly indicate contributions from diffusion and surface exchange in grains as well as in grain boundaries. Measured depth profiles were analyzed by finite element modeling and revealed the diffusion coefficients D and oxygen exchange coefficients k of both the grain bulk and grain boundaries. Values obtained for grain boundaries (Dgb and kgb) are almost three orders of magnitude higher than those of the grains (Dg and kg). Hence, grain boundaries may not only facilitate fast oxygen diffusion but also fast oxygen exchange kinetics. Variation of the A-site stoichiometry ((La0.8Sr0.2)0.95MnO3) did not lead to large changes of the kinetic parameters. Properties found for epitaxial layers without grain boundaries (Db and kb) are close to those of the grains in polycrystalline layers.

Revealing whether dislocations accelerate oxygen ion transport is important for providing abilities in tuning the ionic conductivity of ceramic materials. In this study, we report how dislocations affect oxygen ion diffusion in Sr-doped LaMnO3 (LSM), a model perovskite oxide that serves in energy conversion technologies. LSM epitaxial thin films with thicknesses ranging from 10 nm to more than 100 nm were prepared by pulsed laser deposition on single-crystal LaAlO3 and SrTiO3 substrates. The lattice mismatch between the film and substrates induces compressive or tensile in-plane strain in the LSM layers. This lattice strain is partially reduced by dislocations, especially in the LSM films on LaAlO3. Oxygen isotope exchange measured by secondary ion mass spectrometry revealed the existence of at least two very different diffusion coefficients in the LSM films on LaAlO3. The diffusion profiles can be quantitatively explained by the existence of fast oxygen ion diffusion along threading dislocations that is faster by up to 3 orders of magnitude compared to that in LSM bulk.

An improved electrode geometry is proposed to study thin ion conducting films by impedance spectroscopy. It is shown that long, thin, and closely spaced electrodes arranged interdigitally allow a separation of grain and grain boundary effects also in very thin films. This separation is shown to be successful for yttria stabilized zirconia (YSZ) layers thinner than 20 nm. In a series of experiments it is demonstrated that the extracted parameters correspond to the YSZ grain boundary and grain bulk resistances or to grain boundary and substrate capacitances. Results also show that our YSZ films produced by pulsed-laser deposition (PLD) on sapphire substrates exhibit a bulk conductivity which is very close to that of macroscopic YSZ samples.