We investigated the effect of a ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin film on the generation of resistive switching in a stacked Pr0.7Ca0.3MnO3 (PCMO)/Nb-doped SrTiO3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction’s depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.

High damping materials exhibiting a loss factor higher than 10-2 are generally considered as polymer or metallic materials. But, it will be interesting to consider ferroelectric or ferrimagnetic ceramics, in which internal friction can be due to the motion of ferroelectric or magnetic domains. High level of internal friction can be obtained in these ceramics in a given temperature range. In the case of ferroelectric ceramics, hard ferroelectrics, such as BaTiO3 or PZT, can show some relaxation peaks below the Curie temperature due the motion of domain walls and the interaction between the domain walls and the oxygen vacancies or cationic vacancies. In the case of ferrimagnetic ceramics, some anelastic manifestations due to the ferrimagnetic domain walls appear below the Curie Temperature TC. These peaks are linked to the interaction of domain walls with cation vacancies or cation interstitials or the lattice. Above the Curie temperature, a relaxation mechanism due to the exchange of cations Mn3+ and their vacancies on octahedral sites should occur.

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