Ferroelectricity-induced resistive switching in Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure

Abstract

We investigated the effect of a ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin film on the generation of resistive switching in a stacked Pr0.7Ca0.3MnO3 (PCMO)/Nb-doped SrTiO3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction’s depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.

Ferroelectric polarization relaxation in Au/Cu2O/ZnO/BiFeO3/Pt heterostructure

“…Therefore, our findings suggest that in a ferroelectric/p-n junction heterostructure, the stability of the ferroelectric polarization is largely controlled by the charge distribution in the p-n junction, which is different from the previous finding that the ferroelectric polarization can be retained and modulate the charge distribution within the p-n junction. 12 To further support our conclusion, we applied pulse. The interval between "poling" and "read" pulses is 30 s and the "write" pulse is applied 15 s after the "poling" pulse.…”

“…By using standard monopolar P-V hysteresis loop and positive-up negative-down (PUND) measurements, we observed a ferroelectric polarization relaxation behavior, i.e., the downward polarization is metastable and spontaneously relaxes in the absence of the external field, in the Au/Cu 2 O/ZnO/BFO/Pt heterostructure. In contrast to the previous assumption of a bistable ferroelectric polarization in the ferroelectric/p-n junction heterostructure, 12 the ferroelectric polarization here is found to be stable only in one orientation and its stability is determined by the compensating charges affected by the p-n junction.…”

“…Such a device promises writing information by switching the ferroelectric polarization and reading information by detecting the resistance of the p-n junction formed by the probe and the semiconductor recording layer. Then, Sadaf et al 12 observed resistive switching behavior in their fabricated all perovskite heterostructure consisting of a thin Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) layer grown on a Pr 0.7 Ca 0.3 MnO 3 (PCMO)/Nb-doped SrTiO 3 (Nb:STO) p-n junction, which was attributed to the modulation of the depletion width of PCMO/Nb:STO p-n junction induced by ferroelectric polarization of PZT. It would therefore be of great scientific interest and technological significance to investigate the ferroelectric polarization stability in such heterostructure comprising a ferroelectric layer and a p-n junction.…”

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

“…The speed of ReRAM is about 10 ns, which is 100× faster than that of flash memory devices2. The development of ReRAM relies upon proper selection of materials including oxides, organics, solid electrolytes, and ferroelectrics34567891011. However, the resistive effects in solid electrolytes based ReRAMs are usually based on electroforming or chemical process, which is a destructive process as it involves chemical reaction that could lead to thermal damage of the devices11.…”

Anomalous resistive switching phenomenon

“…BRS behavior has been also observed in perovskite structure metal oxides such as BiFeO 3 , 22 SrZrO 3 , 23 SrTiO 3 , 7 PrCaMnO 3 , 24 as well as in perovskite heterostructures. 25 In this paper, we report resistive switching in Pt/SrTiO 3 / Pt capacitors with switching characteristics that cannot readily be categorized as either BRS or URS. The I À V characteristics show that the resistive switching depends on both the polarity and amplitude of the applied voltage ( Fig.…”