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We present a systematic approach for the design and optimization of nanoparticle-pigmented solar selective absorbers for operation at 750 °C. Using the scattering and absorption cross-sections calculated by Lorenz-Mie scattering theory as input, we employ a four-flux radiative transfer method to investigate the solar selectivity mechanism and optimize the optical-to-thermal conversion efficiency (ηtherm) as a function of the metallic nanoparticle material, the nanoparticle diameter, the volume fraction, and the coating thickness. Among the nanoparticle material candidates in this study, C54-TiSi2 is the best option with an optimized ηtherm = 87.0% for a solar concentration ratio of C = 100 and ηtherm = 94.4% for C = 1000 at 750 °C. NiSi is also a promising candidate comparable to TiSi2 in thermal efficiency. Experimentally, an un-optimized 200 nm-diameter TiSi2 nanoparticle-silicone solar selective coating has already achieved ηtherm = 89.8% for C = 1000 at 750 °C. This performance is consistent with the theoretical model and close to the thermal efficiency of the commercial Pyromark 2500 coatings (90.1%). We also demonstrate that Ni/NiSi core-shell structures embedded in the SiO1.5 matrix is thermally stable at 750 °C for 1000 h in air. These results indicate that silicide cermet coatings are promising to achieve high optical performance and high temperature thermal stability simultaneously.

High-energy (>20 keV) X-ray photon detection at high quantum yield, high spatial resolution, and short response time has long been an important area of study in physics. Scintillation is a prevalent method but limited in various ways. Directly detecting high-energy X-ray photons has been a challenge to this day, mainly due to low photon-to-photoelectron conversion efficiencies. Commercially available state-of-the-art Si direct detection products such as the Si charge-coupled device (CCD) are inefficient for >10 keV photons. Here, we present Monte Carlo simulation results and analyses to introduce a highly effective yet simple high-energy X-ray detection concept with significantly enhanced photon-to-electron conversion efficiencies composed of two layers: a top high-Z photon energy attenuation layer (PAL) and a bottom Si detector. We use the principle of photon energy down conversion, where high-energy X-ray photon energies are attenuated down to ≤10 keV via inelastic scattering suitable for efficient photoelectric absorption by Si. Our Monte Carlo simulation results demonstrate that a 10–30× increase in quantum yield can be achieved using PbTe PAL on Si, potentially advancing high-resolution, high-efficiency X-ray detection using PAL-enhanced Si CMOS image sensors.

The continuing improvement in quantum efficiency (above 90% for single visible photons), reduction in noise (below 1 electron per pixel), and shrink in pixel pitch (less than 1 μm) enable billion-pixel x-ray cameras (BiPC-X) based on commercial complementary metal–oxide–semiconductor (CMOS) imaging sensors. We describe BiPC-X designs and prototype construction based on flexible tiling of commercial CMOS imaging sensors with millions of pixels. Device models are given for direct detection of low energy x rays (<10 keV) and indirect detection of higher energies using scintillators. Modified Birks’s law is proposed for light yield non-proportionality in scintillators as a function of x-ray energy. Single x-ray sensitivity and spatial resolution have been validated experimentally using a laboratory x-ray source and the Argonne Advanced Photon Source. Possible applications include wide field-of-view or large x-ray aperture measurements in high-temperature plasmas, the state-of-the-art synchrotron, x-ray free electron laser, and pulsed power facilities.