Highly oriented antimony telluride thin films are prepared by room temperature metalorganic chemical vapor deposition on Si(111).

Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort toward the development of fast and ultra-low power devices for future information and communication technology. A large spin-to-charge (S2C) conversion efficiency in Au/Co/Au/Sb 2 Te 3 /Si(111) heterostructures based on Sb 2 Te 3 TIs grown by metal-organic chemical vapor deposition on 4″ Si(111) substrates is reported. By conducting room temperature spin pumping ferromagnetic resonance, a 250% enhanced charge current due to spin pumping in the Sb 2 Te 3containing system is measured when compared to the reference Au/Co/Au/ Si(111). The corresponding inverse Edelstein effect length λ IEE ranges from 0.28 to 0.61 nm, depending on the adopted methodological analysis, with the upper value being so far the largest observed for the second generation of 3D chalcogenide-based TIs. These results open the path toward the use of chemical methods to produce TIs on large area Si substrates and characterized by highly performing S2C conversion, thus marking a milestone toward future technology-transfer.

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